We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.
Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs
01.01.2003
129330 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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