We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.


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    Titel :

    Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs


    Beteiligte:
    Liu, K. (Autor:in) / Krotkus, A. (Autor:in) / Bertulis, K. (Autor:in) / McMahon, J.J. (Autor:in) / Xu, J. (Autor:in) / Zhang, X.-C. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    129330 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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