A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275 nm period diffraction grating and multilevel refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers.
Monolithic integration of dual layer optics on broad area semiconductor lasers
01.01.2003
208880 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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