We demonstrate that a surface-normal coupled-quantum-well InGaAs/InAlAs electroabsorptive modulator can provide optical modulation that is comparable to a square-well modulator at 1.55 /spl mu/m; but at much lower driving voltages.
A surface-normal coupled-quantum-well modulator at 1.55 microns
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
01.01.2004
147726 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Power, Coherent InGaAsP/InP Semiconductor Laser Design Operating at 1.55 Microns (Invited)
British Library Conference Proceedings | 1996
|Reflectivity from multiple quantum well modulator with contrast ratio of 22:1 at 1.55 m [2891-563]
British Library Conference Proceedings | 1996
|