Femtosecond excitation of spatially modulated electron hole plasmas leads to an ultrafast structural response within the unit cell of GaAs/AlGaAs superlattices. The transient rocking curve reflects the expansion of wells and compression of barriers.
Femtosecond X-ray diffraction of structural changes in a semiconductor superlattice
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
01.01.2004
227185 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Online Contents | 2001
|Ultra-Fast Domain Formation in a Semiconductor Superlattice
British Library Conference Proceedings | 2002
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