We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.


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    Titel :

    Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers


    Beteiligte:
    Weigl, B. (Autor:in) / Reiner, G. (Autor:in) / Grabherr, M. (Autor:in) / Ebeling, K.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    174361 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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