Generation of 40 ps optical pulses was demonstrated with a peak power of up to 45 W in a single mode, and of up to 380 W from broad area laser diode. Such optical power was achieved in Q-switching regime by means of a saturable absorber formed inside the laser cavity by deep implantation of heavy ions.


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    Titel :

    Superhigh power picosecond optical pulses from Q-switched diode laser


    Beteiligte:
    Portnoi, E.L. (Autor:in) / Venus, G.B. (Autor:in) / Khazan, A.A. (Autor:in) / Gadjiev, I.M. (Autor:in) / Shmarcev, A.Yu. (Autor:in) / Frahm, J. (Autor:in) / Kuhl, D. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    198864 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Superhigh Power Picosecond Optical Pulses From Q-switched Diode Laser

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



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