GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.
Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride
01.01.1999
138174 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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