GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.


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    Titel :

    Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride


    Beteiligte:
    Seo, J.T. (Autor:in) / Hommerich, U. (Autor:in) / Thaik, M. (Autor:in) / MacKenzie, J.D. (Autor:in) / Abernathy, C.R. (Autor:in) / Zavada, J.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    138174 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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