This paper reports the effects of embedding the bottom metal of a thin-film ferroelectric varactor into the wafer substrate. By embedding the bottom metal to a height flush with the surrounding dielectric, a smooth surface remains for the ferroelectric and top metal layers. This parallel stack of layers reduces the coupling between the two metal layers and the resulting capacitance. The design of the device and measured data of etched and non-etched varactors is also presented.
Coplanar waveguide varactors with bottom metal trenched in silicon
01.07.2011
450283 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Improved Trenched Channel Plasmonic Waveguide
British Library Online Contents | 2013
|Coplanar Waveguide Characterization with Thick Metal Coating
British Library Online Contents | 1999
|Superconductive Coplanar-Waveguide Filters
NTRS | 1992
|Film-Cooling Flowfields With Trenched Holes on an Endwall
Online Contents | 2009
|