We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 /spl mu/m.


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    Titel :

    Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects


    Beteiligte:
    Helman, N.C. (Autor:in) / Roth, J.E. (Autor:in) / Altug, H. (Autor:in) / Miller, D.A.B. (Autor:in) / Bour, D.P. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    112189 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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