Hole lifetime in electroabsorption modulator integrated laser diode (EAM-LD) has been reduced to 7ps by employing a shallow quantum well (QW) absorption layer. 10Gbps-80km SMF transmission has been achieved at +5.3dBm fiber launched power.


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    Titel :

    Shallow quantum well EAM-LD with short hole lifetime for high-power and long-reach 10Gbps transmitters


    Beteiligte:
    Miyazaki, Y. (Autor:in) / Yamatoya, T. (Autor:in) / Matsumoto, K. (Autor:in) / Aoyagi, T. (Autor:in) / Nishimura, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    225535 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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