The nonlinear symmetric directional coupler with Bragg reflector was fabricated using a GaInAsP-InP wafer, in which a 300 nm thick InP upper cladding layer and a 450 nm thick GaInAsP layer was used.


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    Titel :

    Nonlinear directional coupler loaded with Bragg reflector


    Beteiligte:
    Nakatsuhara, K. (Autor:in) / Mizumoto, T. (Autor:in) / Takahashi, E. (Autor:in) / Hossain, S. (Autor:in) / Jeong, S.H. (Autor:in) / Ma, B.J. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    206400 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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