The selective growth technique on a mask-patterned planar substrate has attracted much attention because it enables simple integration of thickness-tapered waveguides as well as bandgap-energy control in waveguide layers. Moreover, narrow-stripe selective MOVPE enables the formation of active/passive waveguide layers without a mesa-etching process, which is an attractive approach to the fabrication of photonic devices. The paper reviews this technique, and discusses several device applications.


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    Titel :

    Selective MOVPE technique and its applications for photonic devices


    Beteiligte:
    Sasaki, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    176117 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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