In this contribution we will present the technique of MOVPE and how it is used today to grow specialty materials and structures that are being investigated for application in future space missions. The material growth is highly developed and the work on devices is going on. We present the device concepts that can be realized using MOVPE. Among these are solar blind AlN UV detectors, high temperature FETs and bipolar transistors from GaN and SiC, low temperature FETs and bipolar transistors from GaAs, InP, GaInP, long wavelength lasers from Sb-compounds, to name but a few. We present the current trends in the production of the underlying film structures.


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    Titel :

    Metalorganic vapor phase epitaxy for specialty semiconductor devices


    Beteiligte:
    Woelk, E. (Autor:in) / Bremser, M. (Autor:in) / Heuken, M. (Autor:in) / Juergensen, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2000


    Format / Umfang :

    639655 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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