This letter reports on the large-area light-emission GaN LEDs with the size of 1050/spl times/1050 /spl mu/m/sup 2/ fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.


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    Titel :

    Large emitting area GaN based light emitting diode fabricated on conducting copper substrates


    Beteiligte:
    Jung-Tang Chu, (Autor:in) / Wen-Deng Liang, (Autor:in) / Chen-Fu Chu, (Autor:in) / Kuo, H.C. (Autor:in) / Wang, S.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    123161 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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