This letter reports on the large-area light-emission GaN LEDs with the size of 1050/spl times/1050 /spl mu/m/sup 2/ fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
01.01.2004
123161 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Large Emitting Area GaN Based Light Emitting Diode Fabricated on Conducting Copper Substrates
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