Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.


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    Titel :

    Schottky barrier light emitting diode in standard CMOS technology


    Beteiligte:
    Beiju Huang, (Autor:in) / Wei Wang, (Autor:in) / Zan Dong, (Autor:in) / Zanyun Zhang, (Autor:in) / Weilian Guo, (Autor:in) / Hongda Chen, (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    357764 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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