We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 /spl mu/m. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.
Characteristics of 1.3 /spl mu/m InGaNAs light-emitting diodes
01.01.2003
75846 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Characteristics of 1.3 mum InGaNAs light-emitting diodes
British Library Conference Proceedings | 2003
|Characteristics of InGaNAs vertical-cavity surface-emitting lasers
British Library Conference Proceedings | 2003
|InGaNAs Quantum Dot Lasers at 1.36 μm
IEEE | 2006
|British Library Online Contents | 2004
|