GaN-based laser diodes for 405 nm high-power applications are demonstrated. By decreasing the Al concentration of n-cladding layers, the vertical divergence angle was reduced to <18/spl deg/ and the average COD level was increase to >300 mW.


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    Titel :

    High-power blue-violet laser diodes with improved beam divergence and high COD level


    Beteiligte:
    Ryu, H.Y. (Autor:in) / Ha, K.H. (Autor:in) / Lee, S.N. (Autor:in) / Choi, K.K. (Autor:in) / Chang, T.H. (Autor:in) / Son, J.K. (Autor:in) / Chae, J.H. (Autor:in) / Chae, S.H. (Autor:in) / Paek, H.S. (Autor:in) / Sung, Y.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    269449 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Power Blue-Violet Laser Diodes with Improved Beam Divergence and High COD Level

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    GaN-based High-Power Blue-Violet Laser Diodes with a Small Aspect Ratio for Beam Divergence

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004



    High-power blue-violet laser diodes on GaN substrates

    Mizuno, T. / Takeya, M. / Ikeda, S. et al. | IEEE | 2004


    High-Power Blue-Violet Laser Diodes on GaN Substrates

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004