A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown voltage greater than 600V. The proposed vertical structure allows for more efficient heat dissipation and can be easily connected in parallel to provide power of more than 10 kW/cm2.


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    Titel :

    One-directional 3D-SiC MESFET for high power applications


    Beteiligte:


    Erscheinungsdatum :

    01.06.2014


    Format / Umfang :

    982115 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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