GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.


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    Titel :

    InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers


    Beteiligte:
    Kurimoto, M. (Autor:in) / Ganapathy, S. (Autor:in) / Zhang, X.Q. (Autor:in) / Uesugi, K. (Autor:in) / Kumano, H. (Autor:in) / Suemune, I. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    139190 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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