In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45°C.
Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well
01.01.1992
154312 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Characteristics of the Laser Diode with Partially Intermixed GaAs/AlGaAs Quantum Well
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