Summary form only given. Significant progress in AlGaInP material quality has been made in the last decade using organometallic vapor phase epitaxy. Double heterostructure AlGaInP/GaInP/AlGaInP lasers emitting in the 650-680 nm wavelength range have been commercially available for the last five years. However, the development of high-brightness AlGaInP LEDs has been slower due to slightly different requirements in material properties and device structures. One of the problems experienced by the researchers in developing AlGaInP LEDs was the issue of poor current spreading. This is because the upper confining layer employed in the DH structure, usually high aluminum containing alloys, is highly resistive.
High Performance AlGaInP Light-emitting Diodes
01.01.1993
74355 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Performance AlGaInP Light-Emitting Diodes
British Library Conference Proceedings | 1993
|Very High-Efficiency Transparent-Substrate AlGaInP/GaP Light-Emitting Diodes
British Library Conference Proceedings | 1994
|Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes [4078-71]
British Library Conference Proceedings | 2000
|Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes
British Library Online Contents | 2004
|