We present a 1.55 /spl mu/m laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm/sup 2/, lasing at 1.553 /spl mu/m.


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    Titel :

    1.55 /spl mu/m GalnNAsSb lasers on GaAs


    Beteiligte:
    Bank, S.R. (Autor:in) / Wistey, M.A. (Autor:in) / Goddard, L.L. (Autor:in) / Yuen, H.B. (Autor:in) / Bae, H.P. (Autor:in) / Harris, J.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    793940 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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