In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the width of the channel W and the thickness H of the spacerlayer. The velocity will decrease with decreasing width W and increasing thickness H and vice versa. This makes it possible to change the thickness of the layer at predefined places on the substrate by varying the width of the channel. The prepatterned substrates are defined by lithography and wet etching.<>


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Narrow farfield, low threshold tapered lasers


    Beteiligte:
    Vermeire, G. (Autor:in) / Vermaerke, F. (Autor:in) / Van Daele, P. (Autor:in) / Demeester, P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    130436 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Narrow Farfield, Low Threshold Tapered Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    High-power 980-nm DFB diode lasers with a small vertical farfield divergence

    Wenzel, H. / Klehr, A. / Braun, M. et al. | IEEE | 2005


    Low-threshold, efficient vertical cavity lasers with tapered apertures

    Hegblom, E.R. / Margalit, N.M. / Coldren, L.A. | IEEE | 1998


    DFB lasers with tapered active stripe for narrow beam divergence

    Kito, M. / Inaba, Y. / Chino, T. et al. | IEEE | 1998


    Low-Threshold, Efficient Vertical Cavity Lasers with Tapered Apertures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998