The monolithic flared-amplifier master oscillator/power amplifier (MFA-MOPA) has emerged as a preferred technology for obtaining high power, diffraction-limited optical output from a single-frequency semiconductor source. Diffraction-limited operation has recently been demonstrated to an optical output power of 3 W cw with greater than 90% of the optical power in a single diffraction-limited lobe. These devices are useful in applications ranging from frequency doubling to inter-satellite communications. One of the unique advantages of the MOPA approach is that a large change in amplified output power can be obtained by a relatively small change in the injected signal from the master oscillator. In the MFA-MOPA, this means that several watts of optical output can be modulated by changing the master oscillator bias by a few tens of mA. This paper shows that the modulation bandwidth of the MFA-MOPA is essentially that of the master oscillator. Under small-signal modulation, a -3 dB corner frequency of 2.2 GHz is measured.<>


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    Titel :

    Modulation characteristics of MFA-MOPAs


    Beteiligte:
    Kzurko, K.M. (Autor:in) / Parke, R. (Autor:in) / Welch, D.F. (Autor:in) / Lang, R.J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    164735 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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