Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters.


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    Titel :

    The state of the art of group III nitride based light emitters


    Beteiligte:
    Akasaki, I. (Autor:in) / Amano, H. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 331 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    21147 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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