In this paper, new challenges on the III-V-N based quantum wells (QWs) and quantum dots (QDs) prepared with metalorganic molecular-beam epitaxy (MOMBE) is discussed.
MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 /spl mu/m
01.01.2003
123403 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
MOMBE Growth of III-V-N-based Quantum Wells and Quantum Dots Emitting above 1.3mum
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