Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.


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    Titel :

    1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors


    Beteiligte:
    Starck, C. (Autor:in) / Boucart, J. (Autor:in) / Plais, A. (Autor:in) / Derouin, E. (Autor:in) / Pinquier, A. (Autor:in) / Gaborit, F. (Autor:in) / Bonnet-Gamard, J. (Autor:in) / Fortin, C. (Autor:in) / Goldstein, L. (Autor:in) / Brillouet, F. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    259807 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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