Recently, a new class of photoconductors with excess-arsenic-related deep level defects, arsenic-ion-implanted (or GaAs:As/sup +/), has been the subject of intense study. Ultrafast carrier lifetimes, photoconductive and nonlinear optical responses were reported for as-implanted and RTA (rapid thermal annealing) annealed GaAs:As/sup +/. It is expected that the optimum furnace annealing will create arsenic precipitates which can enhance the performance of GaAs:As/sup +/ for photoconductive or nonlinear optical switching applications. The carrier dynamics of furnace-annealed GaAs:As/sup +/ is thus of substantial interests and is the focus of this paper.


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    Titel :

    Near-bandgap ultrafast optical responses of furnace annealed arsenic-ion-implanted GaAs


    Beteiligte:
    Lin, G.-R. (Autor:in) / Pan, C.-L. (Autor:in) / Hsu, T.M. (Autor:in) / Lee, W.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    145782 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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