Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 /spl mu/m -120 /spl mu/m. If a compressive force is applied to the crystal the response shifts to about 100 /spl mu/m - 240 /spl mu/m. We report on a long wavelength, sub-terahertz response >300 /spl mu/m. This response can be attributed to transitions from excited Ga states into the valence band. The results indicate that a cascade type of relaxation exists in Ge:Ga at 4.5 K.


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    Titel :

    Sub-terahertz response of stressed and unstressed Ge:Ga photoconductive detectors


    Beteiligte:
    Hubers, H.-W. (Autor:in) / Pavlov, S.G. (Autor:in) / Holldack, K. (Autor:in) / Kuske, P. (Autor:in) / Schade, U. (Autor:in) / Wustefeld, G. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    132783 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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