In this study, InGaN light emitting diodes (LEDs) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LEDs are greatly reduced as a result of employing longer excitation wavelength with energy less than the band gap of the top p-layer. When compared with single photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers focused on.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Two-photon optical beam induced current imaging of indium gallium nitride blue LEDs


    Beteiligte:
    Fu-Jen Kao, (Autor:in) / Mao-Kuo Huang, (Autor:in) / Yung-Shun Wang, (Autor:in) / Sheng-Lung Huang, (Autor:in) / Chi-Kuang Sun, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    80347 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Two-photon optical beam induced current imaging of indium gallium nitride blue LEDs

    Kao, F.-J. / Huang, M.-K. / Wang, Y.-S. et al. | British Library Conference Proceedings | 2003


    Gallium Indium Nitride-Based Green Lasers

    Sizov, D. / Bhat, R. / Zah, C. | British Library Online Contents | 2012


    Gallium Indium Nitride-Based Green Lasers (Invited Tutorial)

    Sizov, D. / Bhat, R. / Zah, C. | British Library Online Contents | 2012