Dynamics of optical absorption saturation in Be-doped standard-temperature MBE grown GaAs/AlAs MQW was studied by using 200fs laser pulses. Response time becomes less than 1ps at doping [Be] > 1 /spl times/ 10/sup 19/ cm/sup -3/, which is in marked contrast to InGaAs/InAlAs MQW.
Optical nonlinearity and response time in beryllium-doped standard temperature MBE grown GaAs/AlAs MQW
01.01.2001
116567 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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