Dynamics of optical absorption saturation in Be-doped standard-temperature MBE grown GaAs/AlAs MQW was studied by using 200fs laser pulses. Response time becomes less than 1ps at doping [Be] > 1 /spl times/ 10/sup 19/ cm/sup -3/, which is in marked contrast to InGaAs/InAlAs MQW.


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    Titel :

    Optical nonlinearity and response time in beryllium-doped standard temperature MBE grown GaAs/AlAs MQW


    Beteiligte:
    Okuno, T. (Autor:in) / Masumoto, Y. (Autor:in) / Sakuma, Y. (Autor:in) / Hayasaki, Y. (Autor:in) / Kadono, S. (Autor:in) / Okamoto, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    116567 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Optical Nonlinearity and Response Time in Beryllium-Doped Standard Temperature MBE Grown GaAs/AlAs MQW

    Okuno, T. / Masumoto, Y. / Sakuma, Y. et al. | British Library Conference Proceedings | 2001


    Vertikaler Transport in GaAs-AlAs-Übergitterstrukturen

    Grahn, Holger T. / Grahn, Holger Theodor | TIBKAT | 1992


    Thermal diffusivity of GaAs/AlAs superlattices

    Chen, G. / Yu, X. | AIAA | 1994


    Nonlinear Optical and Electro-Optical Characteristics of Hybrid AlAs/GaAs Multilayered Structures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Nonlinear Optical Effects in Low Temperature Grown GaAs

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995