We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.


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    Titel :

    Low-temperature near-field spectroscopy of quantum dots


    Beteiligte:
    Arakawa, Y. (Autor:in) / Toda, Y. (Autor:in) / Nagamune, Y. (Autor:in) / Ohtsu, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    209290 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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