Summary form only given. Reverse-mesa ridge waveguide lasers have been fabricated based on AlGaInAs multiple quantum well active region at 1550 nm wavelength and high performance CW operation has been demonstrated.
Reverse-mesa ridge waveguide long wavelength AlGaInAs-InP multiple quantum well lasers
01.01.1998
122811 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Reverse-Mesa Ridge Waveguide Long Wavelength AlGaInAs/InP Multiple Quantum Well Lasers
British Library Conference Proceedings | 1998
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