Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.
Monolithic p-i-n GaAlAs photorefractive devices
01.01.1996
203688 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Monolithic p-i-n GaAlAs Photorefractive Devices
British Library Conference Proceedings | 1996
|Monolithic Integration of GaAlAs Superluminescent Diode with the Optical Amplifier
British Library Conference Proceedings | 1997
|