Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.


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    Titel :

    Monolithic p-i-n GaAlAs photorefractive devices


    Beteiligte:
    Tayebati, P. (Autor:in) / Hantzis, C. (Autor:in) / Sacks, R.N. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    203688 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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