This paper presents recent progress on high-efficiency mid-IR W diode lasers grown by molecular beam epitaxy. Photoluminescence (PL) and lasing characteristics of a series of W structures are measured in order to determine the optimal conditions for growth of the active region. Results show that the highest PL intensities, narrowest PL and lasing linewidths, lowest lasing thresholds, and highest lasing efficiencies are obtained for growth temperatures in the 480-510/spl deg/C range, which is considerably higher than previously thought optimal.
High-efficiency mid-IR "W" diode lasers
01.01.2004
127702 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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