Silicon carbide (SiC) MOSFETs are now widely applicable in high power converters for ensuring high frequency operation, high power density, and high-power efficiency. At high switching frequencies, crosstalk is inevitable in one leg or bridge configuration of SiC MOSFETs based converters, where the off-state SiC MOSFET is prone to get false turn on signal, resulting in dangerous shoot-through, more severe electromagnetic interference problems, and higher losses of power converters and systems. In this paper, a new resonant based gate driver circuit, that can generate bipolar gate to source voltage (e.g., +15/-4V) using a unipolar auxiliary supply voltage, is proposed for mitigating the crosstalk. The proposed gate driver circuit can generate negative gate to source voltage by using the principle of series resonance circuit and possesses the advantages of easy configuration, simple control, duty cycle and switching frequency independent. Additionally, the proposed one has less power consumption as compared to the conventional solutions due to the energy recycling principle in resonant circuit. LTspice simulation has been performed and an experimental prototype has been built to preliminary validate the operating principle of the proposed solution.


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    Titel :

    A New Resonant-based Gate Driver Circuit for Crosstalk Suppression of SiC MOSFETs


    Beteiligte:
    Parida, Nibedita (Autor:in) / Cheung, Chun-Kit (Autor:in) / Gao, Ziyang (Autor:in)


    Erscheinungsdatum :

    10.10.2024


    Format / Umfang :

    630377 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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