We have demonstrated a high-power widely tunable SG-DBR semiconductor laser monolithically integrated with a SOA. Chip power in excess of 55 mW and SMSR > 40 dB across a 40 nm tuning range have been achieved. Over 13 dBm fiber-coupled power was demonstrated across 85 50-GHz ITU L-band channels.


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    Titel :

    High-power, widely-tunable sampled grating DBR laser integrated with a semiconductor optical amplifier


    Beteiligte:
    Liijeberg, T. (Autor:in) / Tohmon, R. (Autor:in) / Hall, E. (Autor:in) / Abraham, P. (Autor:in) / Focht, M. (Autor:in) / Fish, G.A. (Autor:in) / Larson, M.C. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    114504 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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