1.3 /spl mu/m GaInNAsSb based VCSELs with improved active region structure are reported. By changing the active region, maximum lasing temperature of over 105/spl deg/C and single mode output power at 85/spl deg/C of 0.35 mW were obtained.


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    Titel :

    1.3 /spl mu/m-range GaInNAsSb VCSELs with high temperature operation


    Beteiligte:
    Ikenaga, Y. (Autor:in) / Shimizu, H. (Autor:in) / Setiagung, C. (Autor:in) / Ariga, M. (Autor:in) / Sato, T. (Autor:in) / Hama, T. (Autor:in) / Kumada, K. (Autor:in) / Haga, Y. (Autor:in) / Iwai, N. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    84218 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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