We study the negative differential resistance in negative-effective-mass (NEM) semiconductors. The NEM diodes based on the NDR mechanisms have a self-oscillating frequency in the terahertz range. We have investigated the electric domain dynamics in the diodes under dc electric field, and nonlinear dynamics driven by dc+ac voltages.


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    Titel :

    Semiconductor terahertz oscillators and nonlinear dynamics


    Beteiligte:
    Cao, J. C. (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1068209 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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