In this paper, we have fabricated EO modulators using InAs/lnGaAs columnar QDs, and measured the modulation characteristics. The switching voltage is about 6.1 V and the modulation efficiencies of QD EO modulators are higher than those of bulk modulators at 1.55 /spl mu/m.
InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55/spl mu/m
01.01.2005
712097 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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