Ge/SiGe multiple quantum wells (MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition (UHVCVD) technique. The quantum-confined Stark effect (QCSE) is clearly observed in our MQWs structure.


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    Titel :

    UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation


    Beteiligte:
    Hongwei Zhao, (Autor:in) / Weixuan Hu, (Autor:in) / Chunlai Xue, (Autor:in) / Buwen Cheng, (Autor:in) / Qiming Wang, (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    703261 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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