A novel two-stage laser-induced quantum well intermixing process has been developed in InGaAs/InGaAsP heterostructures. Based on the process, a maximum wavelength shift of 170 nm was observed. Low-loss intermixed waveguides were demonstrated at 1.55 /spl mu/m.


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    Titel :

    Two-stage laser-induced-intermixing process for passive and active integration in InGaAs/InGaAsP heterostructures


    Beteiligte:
    Jiansheng Tang, (Autor:in) / Pingke Zhang, (Autor:in) / Pingsheng Tang, (Autor:in) / Bhatranand, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    101453 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Two-Stage Laser-Induced Intermixing Process for Passive and Active Integration in InGaAs/InGaAsP Heterostructures

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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    Haysom, J. E. / He, J. H. / Poole, P. J. et al. | British Library Conference Proceedings | 1998