A novel two-stage laser-induced quantum well intermixing process has been developed in InGaAs/InGaAsP heterostructures. Based on the process, a maximum wavelength shift of 170 nm was observed. Low-loss intermixed waveguides were demonstrated at 1.55 /spl mu/m.
Two-stage laser-induced-intermixing process for passive and active integration in InGaAs/InGaAsP heterostructures
01.01.2004
101453 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2004
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