We report that a blue LED was successfully fabricated oil a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.
Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff
01.01.2001
121053 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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