We report that a blue LED was successfully fabricated oil a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.


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    Titel :

    Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff


    Beteiligte:
    Chen, C.C. (Autor:in) / Hsu, M.C. (Autor:in) / Hsiao, J.R. (Autor:in) / Yen, J.L. (Autor:in) / Yang, Y.J. (Autor:in) / Lin, C.H. (Autor:in) / Wang, L.A. (Autor:in) / Liu, C.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    121053 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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