New material technologies such as Silicon Carbide (SiC) are promising in the development of compact high-power converters for next generation aerospace power electronics applications. This paper presents an optimized converter design approach that takes into consideration non-linear interactions among various converter components, source and load. A 50% improvement in converter power density is calculated for a 100 V-2 kV, 7 kW SiC DC-DC power converter operating at 150/spl deg/C as compared to a silicon power converter. Experimental results of hard- and soft-switched SiC power converters using commercial Schottky and PiN diodes and JFET's are reported at lower power levels.


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    Titel :

    Silicon carbide power converters for next generation aerospace electronics applications


    Beteiligte:
    Shenai, K. (Autor:in)


    Erscheinungsdatum :

    01.01.2000


    Format / Umfang :

    669776 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Silicon Carbide (SiC) Power Converters for Next Generation Aerospace Electronics Applications

    Shenai, K. / IEEE | British Library Conference Proceedings | 2000



    6H-silicon carbide power devices for aerospace applications

    Palmour, J.W. / Edmont, J.A. / Kong, Hua-Shuang et al. | Tema Archiv | 1993


    Silicon Carbide Power Electronics for High Temperature Applications

    Shenai, K. / Trivedi, M. / Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2000