We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.


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    Titel :

    Modelling spin polarized optoelectronic processes


    Beteiligte:
    Sun, H.B. (Autor:in) / de Oliveria, M.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    179712 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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