We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 /spl mu/m thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
Receiver measurements of pHEB beam lead mixers on 3-/spl mu/m silicon
01.01.2005
1085084 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
TB2-8 Receiver Measurements of pHEB Beam Lead Mixers on 3-um Silicon
British Library Conference Proceedings | 2005
|SAE Technical Papers | 1963
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