We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 /spl mu/m thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.


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    Titel :

    Receiver measurements of pHEB beam lead mixers on 3-/spl mu/m silicon


    Beteiligte:
    Bryerton, E. (Autor:in) / Percy, R. (Autor:in) / Bass, R. (Autor:in) / Schultz, J. (Autor:in) / Oluleye, O. (Autor:in) / Lichtenberger, A. (Autor:in) / Ediss, G.A. (Autor:in) / Pan, S.K. (Autor:in) / Goltsman, G.N. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1085084 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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