InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n/sup +/-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.


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    Titel :

    InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking


    Beteiligte:
    Shu-Han Chen, (Autor:in) / Meng-Lin Lee, (Autor:in) / Po-Han Chen, (Autor:in) / Sheng-Yu Wang, (Autor:in) / Ming-Yuan Tseng, (Autor:in) / Jen-Inn Chyi, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    60741 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch