Interdiffusion in quantum wells (QW) is of current interest for optoelectronic device applications. Interdiffusion between quantum well and barriers allow the modification of quantum well shapes which in turn leads to changes in subband energies in the conduction and valence bands. This allows to modify band gap energy, absorption coefficient and refractive index. Monolithic integration of various optoelectronic devices such as lasers, modulators, detectors and waveguides can be achieved by selective area quantum well intermixing/interdiffusion.


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    Titel :

    Interdiffusion in GaAs-AlGaAs quantum wells using anodic and thermal oxides of GaAs


    Beteiligte:
    Yuan, S. (Autor:in) / Li, G. (Autor:in) / Cohen, R.M. (Autor:in) / Fu, L. (Autor:in) / Tan, H.H. (Autor:in) / Johnston, M.B. (Autor:in) / Dao, L.V. (Autor:in) / Gal, M. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    146950 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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