We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.


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    Titel :

    High speed resonant-cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation


    Beteiligte:
    Dosunmu, O.I. (Autor:in) / Cannon, D.D. (Autor:in) / Emsley, M.K. (Autor:in) / Kimerling, L.C. (Autor:in) / Unlu, M.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    148973 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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