Solid ribbon of silicon pulled horizontally over lip of crucible. As heat leaves silicon by radiation, conduction, and convections, surface layer solidifies from liquid. Horizontal growth of ribbon offers several advantages over vertical growth. It is faster--possibly 1 to 2 centimeters per second-and is done without using drawing dies, source of contamination in vertical growth.
Growing Silicon Ribbon Horizontally
NASA Tech Briefs ; 7 , 2
01.05.1983
Sonstige
Keine Angabe
Englisch
Online Contents | 1997
|NTRS | 1976
|Removing Defects From Silicon Ribbon
NTRS | 1982
|Crucible Grows Wide Silicon Ribbon
NTRS | 1982
|Starting Silicon-Ribbon Growth Automatically
NTRS | 1984
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